Samsung announces 40nm DRAM chip

04.02.2009
. announced Wednesday that it has developed its first DRAM chip and module using 40-nanometer lithography technology.

The new 1Gbit DDR2 component and a corresponding 1GB, 800Mbit/sec. DDR2 inline memory module have been certified in the Intel Platform Validation program for use with the Intel GM45 series Express mobile chip sets.

The new GM45 series mobile chips are expected to reduce power usage by 30% over current 50nm process technology, Samsung said.

The Intel GM45 Express chip set will primarily be used for notebooks.

The migration to 40nm-class process technology is expected to accelerate the time-to-market cycle by 50%, from two years to one, Samsung said.

Samsung that it had taken its DDR3 DRAM chip technology to the 50nm process level. The company plans to apply its 40nm-class technology to also develop a 2Gbit DDR3 device for mass production by the end of 2009.