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Samsung now producing DDR 2.0 NAND flash, touts 3X performance gain

13.05.2011
Samsung Electronics announced that it is now producing high-performance DDR 2.0 multi-level-cell (MLC) memory chips based on its smallest 20-nanometer (nm) circuitry. The chips boast a performance improvement of three times over the company's current chip technology and have 64 gigabits of capacity, twice what Samsung had been producing with DDR 1.0 technology.

The chip will be used in mobile devices such as smartphones, tablets and solid-state drives (SSDs), Samsung said.

Equipped with a toggle DDR (Double Data Rate) 2.0 interface, the new 64Gbit chip can transmit data at a bandwidth of up to 400Mbit/sec.

DDR NAND flash comes in two forms: Toggle Mode ; and ONFI NAND, from the (ONFI) working group.

The ONFI protocol is used by flash manufacturers such as Intel, Micron, SanDisk. Hynix and Spansion. In March, the ONFI working group with up to 400Mbit/sec throughput.

DDR 2.0 provides a 10-fold increase over 40Mbit/sec Single Data Rate (SDR) NAND flash in widespread use today. The new flash memory also triples the performance over 133Mbit/sec toggle DDR 1.0, 32Gbit NAND flash memory, which Samsung and Toshiba have been producing since 2009. "With this 20nm-class, 64Gbit, toggle DDR 2.0 NAND, Samsung is leading the market, which is evolving to fourth-generation and SATA 6Gbit/sec SSDs," Wanhoon Hong, executive vice president of memory sales & marketing for Samsung Electronics, said in a statement.